Datasheet4U Logo Datasheet4U.com

BLV859 - UHF linear push-pull power transistor

General Description

NPN silicon planar transistor with two sections in push-pull configuration.

The device is encapsulated in a SOT262B 4-lead rectangular flange package, with two ceramic caps.

It delivers a Po sync = 20 W in class-A operation at 860 MHz and a supply voltage of 25 V.

Key Features

  • Double internal input and output matching for an optimum wideband capability and high gain.
  • Polysilicon emitter ballasting resistors for an optimum temperature profile.
  • Gold metallization ensures excellent reliability.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
BLV830 N-Channel Enhancement Mode Power MOSFET BELLING
BLV840 N-Channel Enhancement Mode Power MOSFET BELLING
BLV88N30 N-Channel Enhancement Mode Power MOSFET BELLING
BLV108 Vertical N-channel MOSFET SHANGHAI BELLING
BLV1N60 N-Channel Enhancement Mode Power MOSFET BELLING

Other Datasheets by NXP Semiconductors

Part Number Description
BLV857 UHF linear push-pull power transistor
BLV861 UHF linear push-pull power transistor
BLV862 UHF linear push-pull power transistor
BLV897 UHF push-pull power transistor
BLV10 VHF power transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
DISCRETE SEMICONDUCTORS DATA SHEET BLV859 UHF linear push-pull power transistor Product specification Supersedes data of 1995 Oct 04 1996 Jul 26 Philips Semiconductors Product specification UHF linear push-pull power transistor FEATURES • Double internal input and output matching for an optimum wideband capability and high gain • Polysilicon emitter ballasting resistors for an optimum temperature profile • Gold metallization ensures excellent reliability. APPLICATION • Common emitter class-A operation in linear transposers/transmitters (television) in the 470 to 860 MHz frequency band. DESCRIPTION NPN silicon planar transistor with two sections in push-pull configuration. The device is encapsulated in a SOT262B 4-lead rectangular flange package, with two ceramic caps.