BLV859 Description
NPN silicon planar transistor with two sections in push-pull configuration. The device is encapsulated in a SOT262B 4-lead rectangular flange package, with two ceramic caps. It delivers a Po sync = 20 W in class-A operation at 860 MHz and a supply voltage of 25.
BLV859 Key Features
- Double internal input and output matching for an optimum wideband capability and high gain
- Polysilicon emitter ballasting resistors for an optimum temperature profile
- Gold metallization ensures excellent reliability. APPLICATION
- mon emitter class-A operation in linear transposers/transmitters (television) in the 470 to 860 MHz frequency band. DESC
- toxic materials This product contains beryllium oxide. The product is entirely safe provided that the BeO discs are not