BLV935 Description
NPN silicon planar epitaxial transistor intended for mon emitter class-AB operation. The transistor has internal input matching by means of MOS capacitors and is encapsulated in a 6-lead SOT273 flange envelope with a ceramic cap. All leads are isolated from the flange.
BLV935 Key Features
- Emitter ballasting resistors for an optimum temperature profile
- Gold metallization ensures excellent reliability
- Internal input matching to achieve high power gain and easy design of wideband circuits
BLV935 Applications
- Base stations in the 820 to 980 MHz range