BLV935 Overview
Description
NPN silicon planar epitaxial transistor intended for common emitter class-AB operation. The transistor has internal input matching by means of MOS capacitors and is encapsulated in a 6-lead SOT273 flange envelope with a ceramic cap.
Key Features
- Emitter ballasting resistors for an optimum temperature profile
- Gold metallization ensures excellent reliability
- Internal input matching to achieve high power gain and easy design of wideband circuits. APPLICATIONS
- Base stations in the 820 to 980 MHz range. 1 3 2 4 BLV935
