BLV935 Datasheet | NXP Semiconductors

DISCRETE SEMICONDUCTORS DATA SHEET BLV935 UHF power transistor Product specification 1995 Jun 29 Philips Semiconductors Product specification UHF power transistor Features - Emitter ballasting resistors for an optimum temperature profile - Gold metallization ensures excellent reliability - Internal input matching to achieve high power gain and easy design of wideband circuits. APPLICATIONS - Base stations in the 820 to 980 MHz range. 1 3 2 4 DESCRIPTION NPN silicon planar epitaxial transistor intended for mon emitter class-AB operation. The transistor has internal input matching by means of MOS capacitors and is encapsulated in a 6-lead SOT273 flange envelope with a ceramic cap. All leads are isolated from the flange. handbook, halfpage c b PINNING - SOT273 5 6 PIN 1 2 3 4 5 6 SYMBOL e e c b e e emitter emitter DESCRIPTION e MAM033 collector base emitter emitter Top view Fig.1 Simplified outline and symbol. QUICK REFERENCE DATA RF performance at Th = 25 °C in a mon emitter test circuit. MODE OF OPERATION CW, class-AB f (MHz) 960 VCE (V) 26 PL (W) 30 Gp (d B) ≥9 ηC (%) ≥ 55 WARNING Product and environmental safety - toxic materials This product contains beryllium oxide. The product is entirely safe provided that the Be O disc is not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste. 1995 Jun 29 Philips Semiconductors Product specification UHF power...