Description
N-P-N silicon planar epitaxial transistor primarily intended for use in mobile radio transmitters in the 900 MHz communications band.
Features
- BLV93.
- multi-base structure and emitter-ballasting resistors for an optimum temperature profile.
- internal input matching to achieve an optimum wideband capability and high power gain.
- gold metallization ensures excellent reliability. The transistor has a 6-lead flange envelope with a ceramic cap (SOT-171). All leads are isolated from the flange. QUICK.
BLV93 Datasheet
