BLV93 Overview
Description
N-P-N silicon planar epitaxial transistor primarily intended for use in mobile radio transmitters in the 900 MHz communications band. FEATURES BLV93 - multi-base structure and emitter-ballasting resistors for an optimum temperature profile - internal input matching to achieve an optimum wideband capability and high power gain - gold metallization ensures excellent reliability.
Key Features
- multi-base structure and emitter-ballasting resistors for an optimum temperature profile
- internal input matching to achieve an optimum wideband capability and high power gain
