BLV93 Datasheet | NXP Semiconductors

DISCRETE SEMICONDUCTORS DATA SHEET BLV93 UHF power transistor Product specification March 1993 Philips Semiconductors Product specification UHF power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor primarily intended for use in mobile radio transmitters in the 900 MHz munications band. Features - multi-base structure and emitter-ballasting resistors for an optimum temperature profile - internal input matching to achieve an optimum wideband capability and high power gain - gold metallization ensures excellent reliability. The transistor has a 6-lead flange envelope with a ceramic cap (SOT-171). All leads are isolated from the flange. QUICK REFERENCE DATA R.F. performance at Th = 25 °C in a mon-emitter class-B test circuit MODE OF OPERATION VCE V 12,5 9,6 f MHz 900 900 PL W 8 6 > typ. Gp d B 6,5 6,0 > typ. ηC % 50 59 narrow band; c.w. PINNING - SOT171A PIN 1 2 3 4 5 6 SYMBOL e e b c e e DESCRIPTION emitter emitter base collector emitter emitter Fig.1 Simplified outline and symbol. Top view 1 3 5 MAM141 handbook, halfpage 6 c b e WARNING Product and environmental safety - toxic materials This product contains beryllium oxide. The product is entirely safe provided that the Be O disc is not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste. March 1993 Philips Semiconductors Product specification UHF power transistor RATINGS Limiting values in accordance with the Absolute Maximum System (IEC 134) Collector-base voltage (open emitter) peak value Collector-emitter voltage (open base) Emitter-base voltage (open collector) Collector current d.c. or average (peak value); f > 1 MHz Total power dissipation at Tmb = 67 °C at Tmb = 67 °C; f > 1 MHz Storage temperature...