BLV93 Description
N-P-N silicon planar epitaxial transistor primarily intended for use in mobile radio transmitters in the 900 MHz munications band.
BLV93 Key Features
- multi-base structure and emitter-ballasting resistors for an optimum temperature profile
- internal input matching to achieve an optimum wideband capability and high power gain
- gold metallization ensures excellent reliability. The transistor has a 6-lead flange envelope with a ceramic cap (SOT-17
- SOT171A PIN 1 2 3 4 5 6 SYMBOL e e b c e e DESCRIPTION emitter emitter base collector emitter emitter Fig.1 Simplified o
- toxic materials This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not da