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BLV91-SL - UHF power transistor

Download the BLV91-SL datasheet PDF. This datasheet also covers the BLV91 variant, as both devices belong to the same uhf power transistor family and are provided as variant models within a single manufacturer datasheet.

General Description

NPN silicon planar epitaxial transistor designed for use in mobile radio transmitters in the 900 MHz band.

Key Features

  • BLV91/SL.
  • diffused emitter-ballasting resistors for an optimum temperature profile.
  • gold metallization ensures excellent reliability.
  • the device can be applied at rated load power, without an external heatsink, when it is mounted on a printed-circuit board (see Fig.6). The transistor has a 4-lead envelope with a ceramic cap (SOT-172D). All leads are isolated from the mounting base. QUICK.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (BLV91-Philips.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
BLV910 UHF power transistor NXP
BLV90 UHF power transistor NXP
BLV904 UHF power transistor NXP
BLV909 UHF power transistor NXP
BLV92 UHF power transistor NXP

Other Datasheets by Philips Semiconductors (now NXP Semiconductors)

Part Number Description
BLV91 UHF power transistor
BLV45 VHF power transistor
BLV45-12 VHF power transistor
BLV75 VHF power transistor
BLV75-12 VHF power transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
DISCRETE SEMICONDUCTORS DATA SHEET BLV91/SL UHF power transistor Product specification September 1988 http://www.Datasheet4U.com Philips Semiconductors Product specification UHF power transistor DESCRIPTION NPN silicon planar epitaxial transistor designed for use in mobile radio transmitters in the 900 MHz band. FEATURES BLV91/SL • diffused emitter-ballasting resistors for an optimum temperature profile. • gold metallization ensures excellent reliability. • the device can be applied at rated load power, without an external heatsink, when it is mounted on a printed-circuit board (see Fig.6). The transistor has a 4-lead envelope with a ceramic cap (SOT-172D). All leads are isolated from the mounting base.