BLV91-SL Datasheet | Philips Semiconductors

DESCRIPTION NPN silicon planar epitaxial transistor designed for use in mobile radio transmitters in the 900 MHz band. FEATURES BLV91/SL - diffused emitter-ballasting resistors for an optimum temperature profile. - gold metallization ensures excellent reliability. - the device can be applied at rated load power, without an external heatsink, when it is mounted on a printed-circuit board (see Fig.6). The transistor has a 4-lead envelope with a ceramic cap (SOT-172D). All leads are isolated from the mounting base. QUICK REFERENCE DATA RF performance in a mon-emitter class-B circuit MODE OF OPERATION narrow band; CW T °C Tmb = 25 Ta = Ta = Note 1. Device mounted on a printed-circuit board (see Fig.6). 25(1) 25(1) VCE V 12.5 12.5 9.6 f MHz 900 900 900 PL W 2 1.5 1.5 Gp d B > 6.5 > 6.5 typ. 6.6 ηC % > 50 > 50 typ. 60 PIN CONFIGURATION PINNING - SOT172D. PIN 1 2 DESCRIPTION emitter base collector emitter handbook, halfpage 3 4 4 Top view MSB007 Fig.1 Simplified outline. SOT172D. PRODUCT SAFETY This device incorporates beryllium oxide, the dust of which is toxic. The device is entirely safe provided that the Be O disc is not damaged. September 1988 2 http://.. Philips Semiconductors Product specification UHF power transistor RATINGS Limiting values in accordance with the Absolute Maximum System (IEC 134) Collector-base voltage (open emitter) Collector-emitter voltage (open base) Emitter-base voltage (open collector) Collector current DC or average (peak value); f > 1 MHz Total power dissipation f > 1 MHz; Tmb ≤ 90 °C Storage temperature Operating junction temperature Ptot(RF) Tstg Tj max. max. IC; IC(AV) ICM max. max. VCBO VCEO VEBO max. max. max. BLV91/SL 36 V 16 V 3 V 0.4 A 1.2 A 6 W 200 °C - 65 to + 150 °C handbook, halfpage MDA398 Ptot(rf) (W) II 8 0 0 40 80 120 160 Tmb (°C) I Continuous RF operation (f > 1 MHz) II Short-time RF operation during mismatch (f > 1 MHz) Fig.2 Power/temperature curve. THERMAL RESISTANCE...