BLV910 Description
NPN silicon planar epitaxial transistor intended for mon emitter class-AB operation. The transistor is encapsulated in a 6-lead SOT171 flange envelope with a ceramic cap. All leads are isolated from the flange.
BLV910 Key Features
- Internal input matching to achieve high power gain and easy design of wideband circuits
- Emitter ballasting resistors for an optimum temperature profile
- Gold metallization ensures excellent reliability
BLV910 Applications
- Base station transmitters in the 820 to 960 MHz range