BLV910 Datasheet | NXP Semiconductors

DISCRETE SEMICONDUCTORS DATA SHEET BLV910 UHF power transistor Product specification 1995 Apr 11 Philips Semiconductors Philips Semiconductors Product specification UHF power transistor Features - Internal input matching to achieve high power gain and easy design of wideband circuits - Emitter ballasting resistors for an optimum temperature profile - Gold metallization ensures excellent reliability. APPLICATIONS - Base station transmitters in the 820 to 960 MHz range. handbook, halfpage DESCRIPTION NPN silicon planar epitaxial transistor intended for mon emitter class-AB operation. The transistor is encapsulated in a 6-lead SOT171 flange envelope with a ceramic cap. All...