Description
NPN silicon planar epitaxial transistor designed for use in mobile radio transmitters in the 900 MHz band.
Features
- BLV91/SL.
- diffused emitter-ballasting resistors for an optimum temperature profile.
- gold metallization ensures excellent reliability.
- the device can be applied at rated load power, without an external heatsink, when it is mounted on a printed-circuit board (see Fig.6). The transistor has a 4-lead envelope with a ceramic cap (SOT-172D). All leads are isolated from the mounting base. QUICK.
BLV91 Datasheet
