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BLV91 - UHF power transistor

General Description

NPN silicon planar epitaxial transistor designed for use in mobile radio transmitters in the 900 MHz band.

Key Features

  • BLV91/SL.
  • diffused emitter-ballasting resistors for an optimum temperature profile.
  • gold metallization ensures excellent reliability.
  • the device can be applied at rated load power, without an external heatsink, when it is mounted on a printed-circuit board (see Fig.6). The transistor has a 4-lead envelope with a ceramic cap (SOT-172D). All leads are isolated from the mounting base. QUICK.

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Other Datasheets by Philips Semiconductors (now NXP Semiconductors)

Part Number Description
BLV91-SL UHF power transistor
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DISCRETE SEMICONDUCTORS DATA SHEET BLV91/SL UHF power transistor Product specification September 1988 http://www.Datasheet4U.com Philips Semiconductors Product specification UHF power transistor DESCRIPTION NPN silicon planar epitaxial transistor designed for use in mobile radio transmitters in the 900 MHz band. FEATURES BLV91/SL • diffused emitter-ballasting resistors for an optimum temperature profile. • gold metallization ensures excellent reliability. • the device can be applied at rated load power, without an external heatsink, when it is mounted on a printed-circuit board (see Fig.6). The transistor has a 4-lead envelope with a ceramic cap (SOT-172D). All leads are isolated from the mounting base.