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BLV909 - UHF power transistor

General Description

NPN silicon planar epitaxial transistor in an 8-lead SOT409B SMD package with a ceramic cap.

All leads are isolated from the mounting base.

Key Features

  • Emitter ballasting resistors for optimum temperature profile.
  • Gold metallization ensures excellent reliability.
  • Internal input matching to achieve high power gain and easy design of wideband circuits.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DISCRETE SEMICONDUCTORS DATA SHEET M3D175 BLV909 UHF power transistor Product specification Supersedes data of 1996 Nov 04 1999 Jun 25 Philips Semiconductors Product specification UHF power transistor FEATURES • Emitter ballasting resistors for optimum temperature profile • Gold metallization ensures excellent reliability • Internal input matching to achieve high power gain and easy design of wideband circuits. APPLICATIONS • Common emitter class-AB operation in base stations in the 820 to 960 MHz frequency range. DESCRIPTION NPN silicon planar epitaxial transistor in an 8-lead SOT409B SMD package with a ceramic cap. All leads are isolated from the mounting base.