BLV909 Datasheet | NXP Semiconductors

DISCRETE SEMICONDUCTORS DATA SHEET M3D175 BLV909 UHF power transistor Product specification Supersedes data of 1996 Nov 04 1999 Jun 25 Philips Semiconductors Product specification UHF power transistor Features - Emitter ballasting resistors for optimum temperature profile - Gold metallization ensures excellent reliability - Internal input matching to achieve high power gain and easy design of wideband circuits. APPLICATIONS - mon emitter class-AB operation in base stations in the 820 to 960 MHz frequency range. DESCRIPTION NPN silicon planar epitaxial transistor in an 8-lead SOT409B SMD package with a ceramic cap. All leads are isolated from the mounting base. 1 Top view...