BLV904 Description
NPN silicon planar epitaxial power transistor in an 8-lead SOT409B SMD package with ceramic cap. All leads are isolated from the mounting base. QUICK REFERENCE DATA RF performance at Tmb = 25 °C in a mon emitter test circuit.
BLV904 Key Features
- Emitter ballasting resistors for optimum temperature profile
- Gold metallization ensures excellent reliability
- Internal input matching to achieve high power gain and easy design of wideband circuits