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BLV90 - UHF power transistor

General Description

NPN silicon planar epitaxial transistor designed for use in mobile radio transmitters in the 900 MHz band.

Key Features

  • BLV90.
  • diffused emitter-ballasting resistors for an optimum temperature profile.
  • gold metallization ensures excellent reliability.
  • the device can be applied at rated output power without an external heatsink when it is mounted on a printed-circuit board (see Fig.6). The transistor has a 4-lead envelope with a ceramic cap (SOT-172D). All leads are isolated from the mounting base. QUICK.

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Full PDF Text Transcription (Reference)

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DISCRETE SEMICONDUCTORS DATA SHEET BLV90 UHF power transistor Product specification February 1996 Philips Semiconductors Product specification UHF power transistor DESCRIPTION NPN silicon planar epitaxial transistor designed for use in mobile radio transmitters in the 900 MHz band. FEATURES BLV90 • diffused emitter-ballasting resistors for an optimum temperature profile. • gold metallization ensures excellent reliability. • the device can be applied at rated output power without an external heatsink when it is mounted on a printed-circuit board (see Fig.6). The transistor has a 4-lead envelope with a ceramic cap (SOT-172D). All leads are isolated from the mounting base. QUICK REFERENCE DATA RF performance at Ta = 25 °C in a common-emitter class-B circuit.