Datasheet4U.com

BLV90 - UHF power transistor

Product Overview

NXP

📥 Download Datasheet

BLV90 UHF power transistor by NXP - Datasheet Preview — Datasheet preview – BLV90

Datasheet Details

Part number	BLV90
Manufacturer	NXP
File Size	54.16 KB
Description	UHF power transistor
Datasheet	BLV90 Datasheet
Additional preview pages of the BLV90 datasheet.

Product details

Description

NPN silicon planar epitaxial transistor designed for use in mobile radio transmitters in the 900 MHz band.

Features

BLV90.
diffused emitter-ballasting resistors for an optimum temperature profile.
gold metallization ensures excellent reliability.
the device can be applied at rated output power without an external heatsink when it is mounted on a printed-circuit board (see Fig.6). The transistor has a 4-lead envelope with a ceramic cap (SOT-172D). All leads are isolated from the mounting base. QUICK.

📁 Similar Datasheet

BLV91 - UHF power transistor (Philips)
BLV91-SL - UHF power transistor (Philips)
BLV108 - Vertical N-channel MOSFET (SHANGHAI BELLING)
BLV1N60 - N-Channel Enhancement Mode Power MOSFET (BELLING)
BLV1N60A - N-Channel Enhancement Mode Power MOSFET (BELLING)
BLV297 - N-Channel Enhancement Mode Power MOSFET (BELLING)
BLV2N60 - N-channel Enhancement Mode Power MOSFET (SHANGHAI BELLING)
BLV30 - NPN SILICON RF POWER TRANSISTOR (Advanced Semiconductor)

Other Datasheets by NXP

BLV904 - UHF power transistor
BLV909 - UHF power transistor
BLV910 - UHF power transistor
BLV92 - UHF power transistor
BLV920 - UHF power transistor
BLV93 - UHF power transistor

Published: Mar 23, 2005 |