Description
NPN silicon planar epitaxial transistor designed for use in mobile radio transmitters in the 900 MHz band.
Features
- BLV90.
- diffused emitter-ballasting resistors for an optimum temperature profile.
- gold metallization ensures excellent reliability.
- the device can be applied at rated output power without an external heatsink when it is mounted on a printed-circuit board (see Fig.6). The transistor has a 4-lead envelope with a ceramic cap (SOT-172D). All leads are isolated from the mounting base. QUICK.
BLV90 Datasheet
