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BLW30 - VHF power transistor

General Description

NPN silicon planar epitaxial transistor encapsulated in a 4-lead 3⁄8 inch SOT120 capstan envelope with a ceramic cap.

It is designed for common emitter, class-B operation mobile VHF transmitters with a supply voltage of 12.5 V.

All leads are isolated from the stud.

Key Features

  • Emitter-ballasting resistors for an optimum temperature profile.
  • Excellent reliability.
  • Withstands full load mismatch.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DISCRETE SEMICONDUCTORS DATA SHEET BLW30 VHF power transistor Product specification September 1991 Philips Semiconductors Product specification VHF power transistor FEATURES • Emitter-ballasting resistors for an optimum temperature profile • Excellent reliability • Withstands full load mismatch. DESCRIPTION NPN silicon planar epitaxial transistor encapsulated in a 4-lead 3⁄8 inch SOT120 capstan envelope with a ceramic cap. It is designed for common emitter, class-B operation mobile VHF transmitters with a supply voltage of 12.5 V. All leads are isolated from the stud. PINNING - SOT120 PIN 1 2 3 4 DESCRIPTION collector emitter base emitter 1 3 handbook, halfpage halfpage BLW30 QUICK REFERENCE DATA RF performance at Tmb = 25 °C in a common emitter test circuit. MODE OF OPERATION c.w.