BLW34 Datasheet | NXP Semiconductors

DISCRETE SEMICONDUCTORS DATA SHEET BLW34 UHF linear power transistor Product specification August 1986 Philips Semiconductors Product specification UHF linear power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor primarily intended for use in linear u.h.f. amplifiers for television transmitters and transposers. The excellent d.c. dissipation properties for class-A operation are obtained by means of diffused emitter ballasting resistors and a multi-base structure, providing an optimum temperature profile on the crystal area. The bination of optimum thermal design and the application of gold sandwich metallization realizes excellent reliability properties. The transistor has a 1⁄4" capstan envelope with ceramic cap. QUICK REFERENCE DATA R.F. performance MODE OF OPERATION class-A; linear amplifier fvision MHz 860 860 Note 1. Three-tone test method (vision carrier - 8 d B, sound carrier - 7 d B, sideband signal - 16 d B), zero d B corresponds to peak sync level. PIN CONFIGURATION PINNING - SOT122A. PIN 1 2 handbook, halfpage VCE V 25 25 IC m A 600 600 Th °C 70 25 dim(1) d B - 60 - 60 Po sync (1) W > typ. 1,8 2,15 > typ. Gp d B 9 10,2 DESCRIPTION collector emitter base emitter 4 1 3 3 4 2 Top view MBK187 Fig.1 Simplified outline. SOT122A. PRODUCT SAFETY This device incorporates beryllium oxide, the dust of which is toxic. The device is entirely safe provided that the Be O disc is not damaged. August 1986 Philips Semiconductors Product...