BS250
Description
P-channel enhancement mode vertical D-MOS transistor in TO-92 variant envelope and intended for use in relay, high-speed and line-transformer drivers. FEATURES - Low RDS(on) - Direct interface to C-MOS - High-speed switching - No second breakdown PINNING - TO-92 VARIANT 1 2 3 = source = gate = drain QUICK REFERENCE DATA Drain-source voltage Gate-source voltage (open drain) Drain current (DC) Total power dissipation up to Tamb = 25 °C Drain-source ON-resistance -ID = 200 mA; -VGS = 10 V Transfer admittance -ID = 200 mA; -VDS = 15 V Yfs typ.
Key Features
- Direct interface to C-MOS
- High-speed switching
- No second breakdown PINNING
