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BS250 - P-channel enhancement mode vertical D-MOS transistor

Datasheet Summary

Description

P-channel enhancement mode vertical D-MOS transistor in TO-92 variant envelope and intended for use in relay, high-speed and line-transformer drivers.

Features

  • Low RDS(on).
  • Direct interface to C-MOS.
  • High-speed switching.
  • No second breakdown.

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Datasheet Details

Part number BS250
Manufacturer NXP
File Size 50.00 KB
Description P-channel enhancement mode vertical D-MOS transistor
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Full PDF Text Transcription

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DISCRETE SEMICONDUCTORS DATA SHEET BS250 P-channel enhancement mode vertical D-MOS transistor Product specification File under Discrete Semiconductors, SC13b April 1995 Philips Semiconductors Product specification P-channel enhancement mode vertical D-MOS transistor DESCRIPTION P-channel enhancement mode vertical D-MOS transistor in TO-92 variant envelope and intended for use in relay, high-speed and line-transformer drivers.
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