NXP Semiconductors BS250
This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later.- Channels : 1
- Max Operating Temp : 150°C
- Min Operating Temp : -55°C
Source:
Octopart
| Part No. | BS250 |
|---|---|
| Datasheet | BS250 Download |
| Manufacturer |  NXP Semiconductors |
| Description | P-channel enhancement mode vertical D-MOS transistor |
| Buy | Stock & Price |
DESCRIPTION
P-channel enhancement mode vertical D-MOS transistor in TO-92 variant envelope and intended for use in relay, high-speed and line-transformer drivers.FEATURES
● Low RDS(on)● Direct interface to C-MOS
● High-speed switching
● No second breakdown PINNING - TO-92 VARIANT 1 2 3 = source = gate = drain QUICK REFERENCE DATA Drain-source voltage Gate-source voltage (open drain) Drain current (DC) Total power dissipation up to Tamb = 25 °C Drain-source ON-resistance −ID = 200 mA; −VGS = 10 V Transfer admittance −ID = 200 mA; −VDS = 15 V Yfs typ. RDS(on) typ. max. Ptot max. −VDS ±VGSO −ID max. max. max. BS250 45 V 20 V 0.25 A 0.83 W 9 Ω 14 Ω 125 mS PIN CONFIGURATION handbook, halfpage 1 d 2 3 g s MAM147 Note: Various pinout configurations available. Fig.1 Simplified outline and symbol. April 1995 2 Philips Semiconductors Product specification P-channel enhancement mode vertical D-MOS transistor RATINGS Limiting values in accordance with the Absolute Maximum System (IEC 134) Drai...
