Datasheet4U Logo Datasheet4U.com

BSH202 - P-channel enhancement mode MOS transistor

General Description

P-channel, enhancement mode, logic level, field-effect power transistor.

This device has low threshold voltage and extremely fast switching making it ideal for battery powered applications and high speed digital interfacing.

The BSH202 is supplied in the SOT23 subminiature surface mounting package.

Key Features

  • Low threshold voltage.
  • Fast switching.
  • Logic level compatible.
  • Subminiature surface mount package BSH202 SYMBOL s QUICK.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
BSH201 P-Channel 60V MOSFET VBsemi
BSH205 P-Channel 20V MOSFET VBsemi
BSH205G2 P-channel Trench MOSFET nexperia
BSH205G2A P-channel Trench MOSFET nexperia
BSH103 N-Channel MOSFET VBsemi

Other Datasheets by NXP Semiconductors

Part Number Description
BSH201 P-channel enhancement mode MOS transistor
BSH203 P-channel enhancement mode MOS transistor
BSH205 P-channel enhancement mode MOS transistor
BSH206 P-channel enhancement mode MOS transistor
BSH207 P-channel enhancement mode MOS transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Philips Semiconductors Product specification P-channel enhancement mode MOS transistor FEATURES • Low threshold voltage • Fast switching • Logic level compatible • Subminiature surface mount package BSH202 SYMBOL s QUICK REFERENCE DATA VDS = -30 V ID = -0.52 A RDS(ON) ≤ 0.9 Ω (VGS = -10 V) d g GENERAL DESCRIPTION P-channel, enhancement mode, logic level, field-effect power transistor. This device has low threshold voltage and extremely fast switching making it ideal for battery powered applications and high speed digital interfacing. The BSH202 is supplied in the SOT23 subminiature surface mounting package.