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BSH206 - P-channel enhancement mode MOS transistor

General Description

P-channel, enhancement mode, logic level, field-effect power transistor.

This device has low threshold voltage and extremely fast switching making it ideal for battery powered applications and high speed digital interfacing.

The BSH206 is supplied in the SOT363 subminiature surface mounting package.

Key Features

  • Very low threshold voltage.
  • Fast switching.
  • Logic level compatible.
  • Subminiature surface mount package BSH206 SYMBOL s QUICK.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Philips Semiconductors Product specification P-channel enhancement mode MOS transistor FEATURES • Very low threshold voltage • Fast switching • Logic level compatible • Subminiature surface mount package BSH206 SYMBOL s QUICK REFERENCE DATA VDS = -12 V ID = -0.75 A RDS(ON) ≤ 0.5 Ω (VGS = -2.5 V) VGS(TO) ≥ 0.4 V d g GENERAL DESCRIPTION P-channel, enhancement mode, logic level, field-effect power transistor. This device has low threshold voltage and extremely fast switching making it ideal for battery powered applications and high speed digital interfacing. The BSH206 is supplied in the SOT363 subminiature surface mounting package.