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BSP030 - N-Channel MOSFET

General Description

N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™1 technology.

Product availability: BSP030 in SOT223.

2.

Key Features

  • s TrenchMOS™ technology s Fast switching s Low on-state resistance s Logic level compatible s Surface mount package. 3.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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BSP030 N-channel enhancement mode field-effect transistor Rev. 04 — 26 July 2000 Product specification 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™1 technology. Product availability: BSP030 in SOT223. 2. Features s TrenchMOS™ technology s Fast switching s Low on-state resistance s Logic level compatible s Surface mount package. 3. Applications s Motor and actuator driver c c s Battery management s High speed, low resistance switch. 4. Pinning information Table 1: Pinning - SOT223, simplified outline and symbol Pin Description Simplified outline 1 gate (g) 2 drain (d) 4 3 source (s) 4 drain (d) 03ab45 1 23 SOT223 Symbol d g 03ab30 s N-channel MOSFET 1. TrenchMOS is a trademark of Royal Philips Electronics.