NXP Semiconductors BSP030
N-Channel MOSFET
DESCRIPTION
N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™1 technology. Product availability: BSP030 in SOT223. 2.FEATURES
s TrenchMOS™ technology s Fast switching s Low on-state resistance s Logic level compatible s Surface mount package. 3.APPLICATIONS
s Motor and actuator driver c c s Battery management s High speed, low resistance switch. 4. Pinning information Table 1: Pinning - SOT223, simplified outline and symbol PinDESCRIPTION
Simplified outline 1 gate (g) 2 drain (d) 4 3 source (s) 4 drain (d) 03ab45 1 23 SOT223 Symbol d g 03ab30 s N-channel MOSFET 1. TrenchMOS is a trademark of Royal Philips Electronics. Philips Semiconductors BSP030 N-channel enhancement mode field-effect transistor 5. Quick reference data Table 2: Quick reference data Symbol Parameter VDS ID Ptot Tj RDSon drain-source voltage (DC) drain current (DC) total power dissipation junction temperature drain-source on-state resistance 6. Limiting values Conditions Tj = 25 to...