BSP030 - N-Channel MOSFET

VBsemi

Key Features

TrenchFET® Power MOSFET.
100 % Rg and UIS Tested www. VBsemi. com SOT-223 D S D G D G S N-Channel MOSFET.

BSP030 n-channel mosfet by VBsemi - Datasheet Preview

Datasheet Details

Part number	BSP030
Manufacturer	VBsemi
File Size	479.55 KB
Description	N-Channel MOSFET
Datasheet	BSP030 Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
BSP030	N-Channel MOSFET	NXP
BSP090	P-channel enhancement mode vertical D-MOS transistor	NXP
BSP100	N-channel enhancement mode TrenchMOS transistor	NXP
BSP100	N-channel enhancement mode TrenchMOS transistor	NXP
BSP106	N-channel enhancement mode vertical D-MOS transistor	NXP

Other Datasheets by VBsemi

Part Number	Description
BSP122	N-Channel MOSFET
BSP123	N-Channel MOSFET
BSP296	N-Channel 100V MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

BSP030 BSP030 N-Channel 30 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () at VGS = 10 V RDS(on) () at VGS = 4.5 V ID (A) Configuration 30 0.019 0.021 7 Single FEATURES • TrenchFET® Power MOSFET • 100 % Rg and UIS Tested www.VBsemi.com SOT-223 D S D G D G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current TC = 25 °C TC = 125 °C ID Continuous Source Current (Diode Conduction) IS Pulsed Drain Currenta IDM Single Pulse Avalanche Current Single Pulse Avalanche Energy IAS L = 0.1 mH EAS Maximum Power Dissipationa TC = 25 °C TC = 125 °C PD Operating Junction and Storage Temperature Range TJ, Tstg LIMIT 30 ± 20 7 4.5 5 31 10 5 4 1.