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BSP128 - N-channel enhancement mode vertical D-MOS transistor

Datasheet Summary

Description

N-channel enhancement mode vertical D-MOS transistor in a SOT223 envelope and intended for use as a line current interruptor in telephone sets and for applications in relay, high-speed and line transformer drivers.

Features

  • Direct interface to C-MOS, TTL, etc.
  • High-speed switching.
  • No secondary breakdown.

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Datasheet preview – BSP128

Datasheet Details

Part number BSP128
Manufacturer NXP
File Size 50.81 KB
Description N-channel enhancement mode vertical D-MOS transistor
Datasheet download datasheet BSP128 Datasheet
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Full PDF Text Transcription

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DISCRETE SEMICONDUCTORS DATA SHEET BSP128 N-channel enhancement mode vertical D-MOS transistor Product specification File under Discrete Semiconductors, SC13b April 1995 Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor FEATURES • Direct interface to C-MOS, TTL, etc. • High-speed switching • No secondary breakdown. DESCRIPTION N-channel enhancement mode vertical D-MOS transistor in a SOT223 envelope and intended for use as a line current interruptor in telephone sets and for applications in relay, high-speed and line transformer drivers. PINNING - SOT223 1 2 3 MAM054 BSP128 QUICK REFERENCE DATA SYMBOL VDS ID RDS(on) VGS(th) PARAMETER drain-source voltage DC drain current drain-source on-resistance gate-source threshold voltage MAX.
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