Datasheet4U Logo Datasheet4U.com

BSP128 - N-channel enhancement mode vertical D-MOS transistor

General Description

N-channel enhancement mode vertical D-MOS transistor in a SOT223 envelope and intended for use as a line current interruptor in telephone sets and for applications in relay, high-speed and line transformer drivers.

Key Features

  • Direct interface to C-MOS, TTL, etc.
  • High-speed switching.
  • No secondary breakdown.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
BSP122 N-Channel MOSFET VBsemi
BSP123 N-Channel MOSFET VBsemi
BSP123 Small-Signal Transistor Siemens Semiconductor Group
BSP123 SIPMOS Small-Signal-Transistor Infineon Technologies AG
BSP125 SIPMOS Small-Signal Transistor Siemens Semiconductor Group

Other Datasheets by NXP Semiconductors

Part Number Description
BSP120 N-channel enhancement mode vertical D-MOS transistor
BSP121 N-channel enhancement mode vertical D-MOS transistor
BSP122 N-channel enhancement mode vertical D-MOS transistor
BSP126 N-channel enhancement mode vertical D-MOS transistor
BSP127 N-channel enhancement mode vertical D-MOS transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
DISCRETE SEMICONDUCTORS DATA SHEET BSP128 N-channel enhancement mode vertical D-MOS transistor Product specification File under Discrete Semiconductors, SC13b April 1995 Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor FEATURES • Direct interface to C-MOS, TTL, etc. • High-speed switching • No secondary breakdown. DESCRIPTION N-channel enhancement mode vertical D-MOS transistor in a SOT223 envelope and intended for use as a line current interruptor in telephone sets and for applications in relay, high-speed and line transformer drivers. PINNING - SOT223 1 2 3 MAM054 BSP128 QUICK REFERENCE DATA SYMBOL VDS ID RDS(on) VGS(th) PARAMETER drain-source voltage DC drain current drain-source on-resistance gate-source threshold voltage MAX.