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BSP250 - P-channel enhancement mode vertical D-MOS transistor

General Description

P-channel enhancement mode vertical D-MOS transistor in a SOT223 plastic SMD package.

CAUTION The device is supplied in an antistatic package.

Key Features

  • High-speed switching.
  • No secondary breakdown.
  • Very low on-resistance.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DISCRETE SEMICONDUCTORS DATA SHEET BSP250 P-channel enhancement mode vertical D-MOS transistor Product specification Supersedes data of November 1994 File under Discrete Semiconductors, SC13b 1997 Jun 20 Philips Semiconductors Product specification P-channel enhancement mode vertical D-MOS transistor FEATURES • High-speed switching • No secondary breakdown • Very low on-resistance. APPLICATIONS • Low-loss motor and actuator drivers • Power switching. DESCRIPTION handbook, halfpage BSP250 PINNING - SOT223 PIN 1 2 3 4 SYMBOL g d s d DESCRIPTION gate drain source drain 4 d P-channel enhancement mode vertical D-MOS transistor in a SOT223 plastic SMD package. g CAUTION The device is supplied in an antistatic package.