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BSP255 - P-channel enhancement mode vertical D-MOS transistor

Datasheet Summary

Description

DESCRIPTION P-channel enhancement mode vertical D-MOS transistor in a 4-pin plastic SOT223 SMD package.

CAUTION The device is supplied in an antistatic package.

The gate-source input must be protected against static discharge during transport or handling.

Features

  • Direct interface to C-MOS, TTL etc.
  • Low threshold voltage.
  • High speed switching.
  • No secondary breakdown.

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Datasheet Details

Part number BSP255
Manufacturer NXP
File Size 65.86 KB
Description P-channel enhancement mode vertical D-MOS transistor
Datasheet download datasheet BSP255 Datasheet
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Full PDF Text Transcription

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DISCRETE SEMICONDUCTORS DATA SHEET BSP255 P-channel enhancement mode vertical D-MOS transistor Product specification Supersedes data of 1996 Jun 13 File under Discrete Semiconductors, SC07 1996 Aug 05 Philips Semiconductors Product specification P-channel enhancement mode vertical D-MOS transistor FEATURES • Direct interface to C-MOS, TTL etc • Low threshold voltage • High speed switching • No secondary breakdown. APPLICATIONS • Line current interrupter in telephone sets • Relay, high speed and line transformer drivers. handbook, halfpage BSP255 PINNING - SOT223 PIN 1 2 3 4 SYMBOL g d s d gate drain source drain DESCRIPTION 4 d DESCRIPTION P-channel enhancement mode vertical D-MOS transistor in a 4-pin plastic SOT223 SMD package.
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