BSP33 Datasheet | NXP Semiconductors

FEATURES - High current (max. 1 A) - Low voltage (max. 80 V). APPLICATIONS - Telephony and general industrial applications. DESCRIPTION PNP medium power transistor in a SOT223 plastic package. NPN plements: BSP41 and BSP43. handbook, halfpage BSP31; BSP32; BSP33 PINNING PIN 1 2, 4 3 base collector emitter DESCRIPTION 2, 4 1 3 1 Top view 2 3 MAM288 Fig.1 Simplified outline (SOT223) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO BSP31 BSP32; BSP33 VCEO collector-emitter voltage BSP31 BSP32; BSP33 VEBO IC ICM IBM Ptot Tstg Tj Tamb Note 1. Device mounted on a printed-circuit board, single sided copper, tinplated, mounting pad for collector 1 cm2. For other mounting conditions, see “Thermal considerations for SOT223 in the General Part of associated Handbook”. emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tamb = 25 °C; note 1 open collector open base - - - - - - - - 65 - - 65 - 60 - 80 - 5 - 1 - 2 - 200 1.3 +150 150 +150 V V V A A m A W °C °C °C PARAMETER collector-base voltage CONDITIONS open emitter - - - 70 - 90 V V MIN. MAX. UNIT 1999 Apr 26 Philips Semiconductors Product specification PNP medium power transistors THERMAL CHARACTERISTICS SYMBOL Rth j-a Rth j-s Note PARAMETER thermal resistance from junction to ambient thermal resistance from junction to soldering point BSP31; BSP32; BSP33 CONDITIONS note 1 VALUE 93 12 UNIT K/W K/W 1. Device mounted on a printed-circuit board, single sided copper, tinplated, mounting pad for collector 1 cm2. For other mounting conditions, see “Thermal considerations for SOT223 in the General Part of associated Handbook”. CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL ICBO IEBO h FE PARAMETER collector cut-off current emitter cut-off current DC current gain BSP32 IC = - 100 µA; VCE = - 5 V; note 1 IC...