BSP33 Datasheet | STMicroelectronics

BSP30/31 BSP32/33 MEDIUM POWER AMPLIFIER ADVANCE DATA s s s s SILICON EPITAXIAL PLANAR PNP TRANSISTORS MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS GENERAL PURPOSE MAINLY INTENDED FOR USE IN MEDIUM POWER INDUSTRIAL APPLICATION AND FOR AUDIO AMPLIFIER OUTPUT STAGE NPN PLEMENTS ARE BSP40, BSP41, BSP42 AND BSP43 RESPECTIVELY SOT-223 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CBO V CEO V CES V EBO IC IB P tot T stg Tj Parameter Collector-Base Voltage (I E = 0) Collector-Emitter Voltage (I B = 0) Collector-Emitter Voltage (R BE = 1KΩ ) Emitter-Base Voltage (I C = 0) Collector Current Base Current Total Dissipation at T c = 25 o C Storage Temperature Max. Operating Junction Temperature -70 -60 -70 -5 -1 -0.1 2 -65 to 150 150 Value BSP30/BSP31 BSP32/BSP33 -90 -80 -90 V V V V A A W o o Unit C C 1/4 October 1995 BSP30/31/32/33 THERMAL DATA R thj-amb - R thj-tab - Thermal Resistance Junction-Ambient Thermal Resistance Junction-Collecor Tab Max Max 62.5 8 o o C/W C/W - Mounted on a ceramic substrate area = 30 x 35 x 0.7 mm ELECTRICAL CHARACTERISTICS (Tcase = 25 o C unless otherwise specified) Symbol I CBO V (BR)CBO Parameter Collector Cut-off Current (I E = 0) Collector-Base Breakdown Voltage (IE = 0) Test Conditions V CB = -60 V V CB = -60 V T j = 150 C -70 -90 -60 -80 -70 -90 -5 o Min. Typ. Max. -100 -50 Unit n A µA V V V V V V V I C = -100 µ A for BSP30/BSP31 for BSP32/BSP33 I C = -10 m A for BSP30/BSP31 for BSP32/BSP33 I C = -10 µ A for BSP30/BSP31 for BSP32/BSP33 I C = -10 µ A V (BR)CEO ∗ Collector-Emitter Breakdown Voltage (I B = 0) V (BR)CES Collector-Emitter Breakdown Voltage (V BE = 0) Emitter-Base Breakdown Voltage (I C = 0) Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage DC Current Gain V (BR)EBO V CE(sat) ∗ V BE(sat) ∗ h FE ∗ I C = -150 m A I C = -500 m A I C = -150 m A I C = -500 m A I B = -15 m A I B = -50 m A I B = -15 m A I B = -50 m A = -5 V = -5 V = -5 V = -5 V = -5 V =...