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BSP92 Datasheet P-channel Enhancement Mode Vertical D-mos Transistor

Manufacturer: NXP Semiconductors

Overview: DISCRETE SEMICONDUCTORS DATA SHEET BSP92 P-channel enhancement mode vertical D-MOS transistor Product specification File under Discrete Semiconductors, SC13b April 1995 Philips Semiconductors Product specification.

General Description

P-channel enhancement mode vertical D-MOS transistor in a SOT223 envelope, intended for use as a surface-mounted device in line current interruptor in telephone sets and for application in relay, high speed and line transformer drivers.

PINNING - SOT223 PIN 1 2 3 4 gate drain source drain Fig.1 Simplified outline (SOT223) and symbol.

DESCRIPTION QUICK REFERENCE DATA SYMBOL −VDS −ID RDS(on) −VGS(th) PARAMETER drain-source voltage DC drain current drain-source on-resistance gate-source threshold voltage MAX.

Key Features

  • Low threshold voltage VGS(th).
  • Direct interface to C-MOS, TTL, etc.
  • High-speed switching.
  • No secondary breakdown.

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