BSP92 Datasheet | NXP Semiconductors

FEATURES - Low threshold voltage VGS(th) - Direct interface to C-MOS, TTL, etc. - High-speed switching - No secondary breakdown. DESCRIPTION P-channel enhancement mode vertical D-MOS transistor in a SOT223 envelope, intended for use as a surface-mounted device in line current interruptor in telephone sets and for application in relay, high speed and line transformer drivers. PINNING - SOT223 PIN 1 2 3 4 gate drain source drain Fig.1 Simplified outline (SOT223) and symbol. DESCRIPTION QUICK REFERENCE DATA SYMBOL - VDS - ID RDS(on) - VGS(th) PARAMETER drain-source voltage DC drain current drain-source on-resistance gate-source threshold voltage MAX. 240 180 20 1.8 UNIT V m A Ω V handbook, halfpage 4 d g 1 Top view 2 3 MAM121 s LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). SYMBOL - VDS ±VGSO - ID - IDM Ptot Tstg Tj PARAMETER drain-source voltage gate-source voltage DC drain current peak drain current total power dissipation storage temperature range junction temperature up to Tamb = 25 °C (note 1) open drain CONDITIONS MIN. - - - - - - 65 - MAX. 240 20 180 720 1.5 150 150 UNIT V V m A m A W °C °C THERMAL RESISTANCE SYMBOL Rth j-a Note 1. Transistor mounted on an epoxy printed circuit board, 40 x 40 x 1.5 mm, mounting pad for the drain tab minimum 6 cm2. PARAMETER from junction to ambient (note 1) THERMAL RESISTANCE 83.3 K/W April 1995 Philips Semiconductors Product specification P-channel enhancement mode vertical D-MOS transistor CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL - V(BR)DSS - IDSS ±IGSS - VGS(th) - VGS RDS(on) PARAMETER drain-source breakdown voltage drain-source leakage current gate-source leakage current gate-source threshold voltage gate-source voltage drain-source on-resistance CONDITIONS - ID = 10 µA; VGS = 0 - VDS = 200 V; VGS = 0 ±VGS = 20 V; VDS = 0 - ID = 1 m A; VGS = VDS - ID = 50 m A; - VDS = 5 V - ID = 180 m A; - VGS = 10...