BSP92 Datasheet | Siemens Semiconductor Group

BSP 92 SIPMOS ® Small-Signal Transistor - P channel - Enhancement mode - Logic Level - VGS(th) = -0 -2.0 V Pin 1 G Type BSP 92 Type BSP 92 Pin 2 D Pin 3 S Pin 4 D -240 V -0.2 A RDS(on) 20 Ω Package SOT-223 Marking BSP 92 Ordering Code Q62702-S653 Tape and Reel Information E6327 Maximum Ratings Parameter Drain source voltage Drain-gate voltage Symbol Values -240 -240 Unit V VDS VDGR VGS Vgs ID RGS = 20 kΩ Gate source voltage Gate-source peak voltage,aperiodic Continuous drain current ± 20 ± A -0.2 TA = 35 °C DC drain current, pulsed IDpuls -0.8 TA = 25 °C Power dissipation Ptot TA = 25 °C Semiconductor Group 18/02/1997 BSP 92 Maximum Ratings Parameter Chip or operating temperature Storage temperature Thermal resistance, chip to ambient air 1) Thermal resistance, junction-soldering point 1) DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Symbol Values -55 ... + 150 -55 ... + 150 ≤ 72 ≤ 12 E 55 / 150 / 56 K/W Unit °C Tj Tstg Rth JA Rth JS 1) Transistor on epoxy pcb 40 mm x 40 mm x 1,5 mm with 6 cm2 copper area for drain connection Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Static Characteristics Drain- source breakdown voltage Values typ. max....