BSR33 Datasheet | NXP Semiconductors

FEATURES - High current (max. 1 A) - Low voltage (max. 80 V). APPLICATIONS - Telephony and general industrial applications - Thick and thin-film circuits. handbook, halfpage BSR30; BSR31; BSR33 PINNING PIN 1 2 3 emitter collector base DESCRIPTION DESCRIPTION PNP medium power transistor in a SOT89 plastic package. NPN plements: BSR40; BSR41 and BSR43. MARKING TYPE NUMBER BSR30 BSR31 BSR33 MARKING CODE BR1 BR2 BR4 1 Bottom view MAM297 Fig.1 Simplified outline (SOT89) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO PARAMETER collector-base voltage BSR30; BSR31 BSR33 VCEO collector-emitter voltage BSR30; BSR31 BSR33 VEBO IC ICM IBM Ptot Tstg Tj Tamb Note 1. Device mounted on a printed-circuit board, single sided copper, tinplated, mounting pad for collector 6 cm2. For other mounting conditions, see “Thermal considerations for SOT89 in the General Part of associated Handbook”. emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tamb ≤ 25 °C; note 1 open collector open base - - - - - - - - 65 - - 65 - 60 - 80 - 5 - 1 - 2 - 200 1.35 +150 150 +150 V V V A A m A W °C °C °C CONDITIONS open emitter - - - 70 - 90 V V MIN. MAX. UNIT 1999 Apr 26 Philips Semiconductors Product specification PNP medium power transistors THERMAL CHARACTERISTICS SYMBOL Rth j-a Rth j-s Note PARAMETER thermal resistance from junction to ambient thermal resistance from junction to soldering point BSR30; BSR31;...