BT132-500D Datasheet | NXP Semiconductors

Philips Semiconductors Product specification Triacs logic level GENERAL DESCRIPTION Glass passivated, sensitive gate triacs in a plastic envelope, intended for use in general purpose bidirectional switching and phase control applications. These devices are intended to be interfaced directly to microcontrollers, logic integrated circuits and other low power gate trigger circuits. BT132 series D QUICK REFERENCE DATA SYMBOL VDRM IT(RMS) ITSM PARAMETER BT132Repetitive peak off-state voltages RMS on-state current Non-repetitive peak on-state current MAX. MAX. UNIT 500D 500 1 16 600D 600 1 16 V A A PINNING - TO92 PIN 1 2 3 DESCRIPTION main terminal 2 PIN CONFIGURATION SYMBOL T2 gate main terminal 1 3 2 1 T1 LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL VDRM IT(RMS) ITSM PARAMETER Repetitive peak off-state voltages RMS on-state current Non-repetitive peak on-state current I2t for fusing Repetitive rate of rise of on-state current after triggering full sine wave; Tlead ≤51 ˚C full sine wave; Tj = 25 ˚C prior to surge t = 20 ms t = 16.7 ms t = 10 ms ITM = 1.5 A; IG = 0.2 A; d IG/dt = 0.2 A/µs T2+ G+ T2+ GT2- GT2- G+ CONDITIONS MIN. -40 -500 5001 1 16 17.6 1.28 50 50 50 10 2 5 5 0.5 150 125 MAX. -600 6001 UNIT V A A A A2s A/µs A/µs A/µs A/µs A V W W ˚C ˚C I2t d IT/dt IGM VGM PGM PG(AV) Tstg Tj Peak gate current Peak gate voltage Peak gate power Average gate power Storage temperature Operating junction temperature over any 20 ms period 1 Although not remended, off-state voltages up to 800V may be applied without damage, but the triac may switch to the on-state. The rate of rise of current should not exceed 3 A/µs. January 1998 1 Rev 1.000 Philips Semiconductors Product specification Triacs logic level THERMAL RESISTANCES SYMBOL Rth j-lead Rth j-a PARAMETER Thermal resistance junction to lead Thermal resistance junction to ambient CONDITIONS full cycle half cycle pcb mounted;lead length = 4mm MIN. -...