NXP Semiconductors BT169G
The rate of rise of current should not exceed 15 A/ s.| Part No. | BT169G |
|---|---|
| Datasheet | BT169G Download |
| Manufacturer |  NXP Semiconductors |
| Description | Thyristor |
| Buy | Stock & Price |
FEATURES AND BENEFITS
● Designed to be interfaced directly to microcontrollers, logic integrated circuits and other low power gate trigger circuits. 1.3APPLICATIONS
● General purpose switching and phase control applications. 1.4 Quick reference data● VDRM, VRRM 200 V (BT169B)
● VDRM, VRRM 400 V (BT169D)
● VDRM, VRRM 600 V (BT169G)
● IT(RMS) 0.8 A
● IT(AV) 0.5 A
● ITSM 8 A 2. Pinning information Table 1. Pin 1 2 3 Discrete pinning
DESCRIPTION
anode (a) gate (g) cathode (k) Simplified outline Symbol A K G sym037 321 SOT54 (TO-92) NXP Semiconductors BT169 series Thyristor logic level 3. Ordering information Table 2. Ordering information Type number Package NameDESCRIPTION
BT169B - plastic single-ended leaded (through hole) package; 3 leads BT169D BT169G 4. Limiting values Version SOT54 Table 3. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions VDRM, VRRM repetitive peak off-state voltages BT169B BT169D BT169G IT(A...
