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BT169G Datasheet PDF

WeEn Semiconductors BT169G

This SCR is designed to be interfaced directly to microcontrollers, logic ICs and other low power gate trigger circuits.
Part No. BT169G
Datasheet BT169G Download
Manufacturer
WeEn Semiconductors
Description SCR
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BT169G datasheet page 1 preview

FEATURES AND BENEFITS

● High voltage capability
● Planar passivated for voltage ruggedness and reliability
● Sensitive gate 3.

APPLICATIONS

● Ignition circuits
● Lighting ballasts
● Protection circuits
● Switched Mode Power Supplies 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions VRRM repetitive peak reverse voltage IT(AV) average on-state current half sine wave; Tlead ≤ 83 °C; Fig. 1 IT(RMS) RMS on-state current half sine wave; Tlead ≤ 83 °C; Fig. 2; Fig. 3 ITSM non-repetitive peak on- half sine wave; Tj(init) = 25 °C; state current tp = 10 ms; Fig. 4; Fig. 5 half sine wave; Tj(init) = 25 °C; tp = 8.3 ms Tj junction temperature Static characteristics IGT gate trigger current VD = 12 V; IT = 10 mA; Tj = 25 °C; Fig. 7 Dynamic characteristics dVD/dt rate of rise of off-state voltage VDM = 402 V; Tj = 125 °C; RGK = 1 kΩ; (VDM = 67% of VDRM); exponential waveform; Fig. 12 Min Typ Max Unit - - 600 V - - 0.5 A - - 0.8 A - - 8A - - 9A - - 125 °C - 50 200 µA 5...
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