BTA216B Datasheet | NXP Semiconductors

DESCRIPTION Glass passivated high mutation triacs in a plastic envelope suitable for surface mounting, intended for use in circuits where high static and dynamic d V/dt and high d I/dt can occur. These devices will mutate the full rated rms current at the maximum rated junction temperature, without the aid of a snubber. QUICK REFERENCE DATA SYMBOL PARAMETER MAX. MAX. MAX. UNIT VDRM IT(RMS) ITSM BTA216BRepetitive peak off-state voltages RMS on-state current Non-repetitive peak on-state current 500B 600B 800B 500 600 800 16 16 16 140 140 140 PINNING - SOT404 PIN DESCRIPTION 1 main terminal 1 2 main terminal 2 3 gate mb main terminal 2 PIN CONFIGURATION mb 2 13 SYMBOL T2 T1 G LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. VDRM Repetitive peak off-state voltages -500 - 5001 IT(RMS) ITSM I2t d IT/dt IGM VGM PGM PG(AV) Tstg Tj RMS on-state current Non-repetitive peak on-state...