BTA216BD Datasheet | NXP Semiconductors

DESCRIPTION BTA216B series D, E and F QUICK REFERENCE DATA SYMBOL PARAMETER BTA216BBTA216BBTA216BRepetitive peak off-state voltages RMS on-state current Non-repetitive peak on-state current MAX. 600D 600E 600F 600 16 140 MAX. 800E 800F 800 16 140 UNIT Passivated guaranteed mutation triacs in a plastic envelope suitable for surface mounting, intended for use in motor control circuits or with other highly inductive loads. These devices balance the requirements of mutation performance and gate sensitivity. The "sensitive gate" E series and "logic level" D series are intended for interfacing with low power drivers, including micro controllers. VDRM IT(RMS) ITSM PINNING - SOT404 PIN 1 2 3 mb DESCRIPTION main terminal 1 main terminal 2 gate main terminal 2 PIN CONFIGURATION mb SYMBOL T2 2 1 3 T1 LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL VDRM IT(RMS) ITSM PARAMETER Repetitive peak off-state voltages RMS on-state current Non-repetitive peak on-state current full sine wave; Tmb ≤ 99 ˚C full sine wave; Tj = 25 ˚C prior to surge t = 20 ms t = 16.7 ms t = 10 ms ITM = 20 A; IG = 0.2 A; d IG/dt = 0.2 A/µs CONDITIONS MIN. -600 6001 16 MAX. -800 800 UNIT V A - I2t d IT/dt IGM VGM PGM PG(AV) Tstg Tj I2t for fusing Repetitive rate of rise of on-state current after triggering Peak gate current Peak gate voltage Peak gate power Average gate power Storage temperature Operating junction temperature 140 150 98 100 2 5 5 0.5 150 125 A A A2s A/µs A V W W ˚C ˚C over any 20 ms period -40 - 1 Although not remended, off-state voltages up to 800V may be applied without damage, but the triac may switch to the on-state. The rate of rise of current should not exceed 15 A/µs. February 2000 1 Rev 1.000 Philips Semiconductors Product specification Three quadrant triacs guaranteed mutation THERMAL RESISTANCES SYMBOL Rth j-mb Rth j-a PARAMETER CONDITIONS BTA216B series D, E and F MIN. - TYP....