BTA216X-800E Datasheet | NXP Semiconductors

DESCRIPTION Passivated guaranteed mutation triacs in a full pack, plastic envelope intended for use in motor control circuits or with other highly inductive loads. These devices balance the requirements of mutation performance and gate sensitivity. The "sensitive gate" E series and "logic level" D series are intended for interfacing with low power drivers, including micro controllers. BTA216X series D, E and F QUICK REFERENCE DATA SYMBOL PARAMETER BTA216XBTA216XBTA216XRepetitive peak off-state voltages RMS on-state current Non-repetitive peak on-state current MAX. 600D 600E 600F 600 16 140 MAX. 800E 800F 800 16 140 UNIT VDRM IT(RMS) ITSM PINNING - SOT186A PIN 1 2 3 DESCRIPTION main terminal 1 PIN CONFIGURATION case SYMBOL T2 main terminal 2 gate 1 2 3 T1 case isolated LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL VDRM IT(RMS) ITSM PARAMETER Repetitive peak off-state voltages RMS on-state current Non-repetitive peak on-state current full sine wave; Ths ≤ 38 ˚C full sine wave; Tj = 25 ˚C prior to surge t = 20 ms t = 16.7 ms t = 10 ms ITM = 20 A; IG = 0.2 A; d IG/dt = 0.2 A/µs CONDITIONS MIN. -600 6001 16 MAX. -800 800 UNIT V A I2t d IT/dt IGM VGM PGM PG(AV) Tstg Tj I2t for fusing Repetitive rate of rise of on-state current after triggering Peak gate current Peak gate voltage Peak gate power Average gate power Storage temperature Operating junction temperature - 140 150 98 100 2 5 5 0.5 150 125 A A A2s A/µs A V W W ˚C ˚C over any 20 ms period -40 - 1 Although not remended, off-state voltages up to 800V may be applied without damage, but the triac may switch to the on-state. The rate of rise of current should not exceed 15 A/µs. October 1999 1 Rev 1.000 Philips Semiconductors Objective specification Three quadrant triacs guaranteed mutation ISOLATION LIMITING VALUE & CHARACTERISTIC Ths = 25 ˚C unless otherwise specified SYMBOL Visol PARAMETER R.M.S. isolation voltage from all three...