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BU1506 - Silicon Diffused Power Transistor

General Description

Enhanced performance, new generation, high-voltage, high-speed switching npn transistor with an integrated damper diode in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television receivers.

Key Features

  • exceptional tolerance to base drive and collector current load variations resulting in a very low worst case dissipation. QUICK.

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Philips Semiconductors Product specification Silicon Diffused Power Transistor BU1506DX GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor with an integrated damper diode in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television receivers. Features exceptional tolerance to base drive and collector current load variations resulting in a very low worst case dissipation.