BU2508DF Datasheet | NXP Semiconductors

DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor with an integrated damper diode in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television receivers. Features exceptional tolerance to base drive and collector current load variations resulting in a very low worst case dissipation. QUICK REFERENCE DATA SYMBOL VCESM VCEO IC ICM Ptot VCEsat ICsat VF tf PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Collector saturation current Diode forward voltage Fall time CONDITIONS VBE = 0 V TYP. 4.5 1.6 0.4 MAX. 1500 700 8 15 45 1.0 2.0 0.6 UNIT V V A A W V A V µs Ths ≤ 25 ˚C IC = 4.5 A; IB = 1.12 A IF = 4.5 A ICsat = 4.5 A; IB(end) = 1.1 A PINNING - SOT199 PIN 1 2 3 base collector emitter DESCRIPTION PIN CONFIGURATION case SYMBOL c b Rbe case isolated 3 e LIMITING VALUES Limiting values in accordance with the Absolute Maximum Rating System (IEC 134) SYMBOL VCESM VCEO IC ICM IB IBM -IB(AV) -IBM Ptot Tstg Tj PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Base current (DC) Base current peak value Reverse base current Reverse base current peak value 1 Total power dissipation Storage temperature Junction temperature CONDITIONS VBE = 0 V MIN. -65 MAX. 1500 700 8 15 4 6 100 5 45 150 150 UNIT V V A A A A m A A W ˚C ˚C average over any 20 ms period Ths ≤ 25 ˚C 1 Turn-off current. July 1998 Rev 1.600 Philips Semiconductors Product specification Silicon Diffused Power Transistor THERMAL RESISTANCES SYMBOL Rth j-hs Rth j-hs Rth j-a PARAMETER Junction to heatsink Junction to heatsink Junction to ambient CONDITIONS without heatsink pound with heatsink pound in free air TYP. 35 MAX. 3.7 2.8 UNIT K/W K/W K/W ISOLATION LIMITING...