BU2508DF Datasheet and Specifications PDF

The BU2508DF is a NPN Transistor.

Key Specifications

Height12.7 mm
Length127 mm
Width76.2 mm
Max Operating Temp150 °C
Part NumberBU2508DF Datasheet
ManufacturerInchange Semiconductor
Overview ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 700V (Min) ·High Switching Speed ·Built-in Damper Diode ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICA. ECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA ; IB= 0,L= 25mH 700 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 600mA; IC= 0 7.5 V VCE(sat) Collector-Emitter Saturation Volt.
Part NumberBU2508DF Datasheet
DescriptionSILICON POWER TRANSISTOR
ManufacturerSavantIC
Overview ·With TO-3PFa package ·High voltage,high speed ·Built-in damper diode APPLICATIONS ·For use in horizontal deflection circuits of colour TV PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION Absolut. ff current Emitter cut-off current DC current gain DC current gain Diode forward voltage Collector capacitance CONDITIONS IC=100mA ;IB=0,L=25mH IE=600mA ;IC=0 IC=4.5A ;IB=1.12A IC=4.5A ;IB=1.7A VCE=BVCES; VBE=0 Tj=125 VEB=7.5V; IC=0 IC=1A ; VCE=5V IC=4.5A ; VCE=1V IF=4.5A IE=0; f=1MHz;VCB=10V 4 MIN .
Part NumberBU2508DF Datasheet
DescriptionSilicon Diffused Power Transistor
ManufacturerNXP Semiconductors
Overview Enhanced performance, new generation, high-voltage, high-speed switching npn transistor with an integrated damper diode in a plastic full-pack envelope intended for use in horizontal deflection circui. exceptional tolerance to base drive and collector current load variations resulting in a very low worst case dissipation. QUICK REFERENCE DATA SYMBOL VCESM VCEO IC ICM Ptot VCEsat ICsat VF tf PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC).

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