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Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2515DX
GENERAL DESCRIPTION
New generation, high-voltage, high-speed switching npn transistor with an integrated damper diode in a full plastic envelope intended for use in horizontal deflection circuits of pc monitors.
QUICK REFERENCE DATA
SYMBOL VCESM VCEO IC ICM Ptot VCEsat ICsat VF tf PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Collector saturation current Diode forward voltage Fall time CONDITIONS VBE = 0 V TYP. 4.5 0.2 MAX. 1500 800 9 20 45 5.0 2.2 0.4 UNIT V V A A W V A V µs
Ths ≤ 25 ˚C IC = 4.5 A; IB = 0.9 A f = 56 kHz IF = 4.5 A ICsat = 4.
BU2515DX Datasheet
