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BU2515DF Datasheet Silicon Diffused Power Transistor

Manufacturer: NXP Semiconductors

Overview: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2515DF.

General Description

New generation, high-voltage, high-speed switching npn transistor with an integrated damper diode in a full plastic envelope intended for use in horizontal deflection circuits of pc monitors.

QUICK REFERENCE DATA SYMBOL VCESM VCEO IC ICM Ptot VCEsat ICsat VF tf PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Collector saturation current Diode forward voltage Fall time CONDITIONS VBE = 0 V TYP.

4.5 0.2 MAX.

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