• Part: BU2515DF
  • Description: Silicon Diffused Power Transistor
  • Manufacturer: NXP Semiconductors
  • Size: 66.98 KB
Download BU2515DF Datasheet PDF
NXP Semiconductors
BU2515DF
BU2515DF is Silicon Diffused Power Transistor manufactured by NXP Semiconductors.
Philips Semiconductors Product specification Silicon Diffused Power Transistor GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor with an integrated damper diode in a full plastic envelope intended for use in horizontal deflection circuits of pc monitors. QUICK REFERENCE DATA SYMBOL VCESM VCEO IC ICM Ptot VCEsat ICsat VF tf PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Collector saturation current Diode forward voltage Fall time CONDITIONS VBE = 0 V TYP. 4.5 0.2 MAX. 1500 800 9 20 45 5.0 2.2...