BU2515DF Datasheet
BU2515DF Datasheet (NXP Semiconductors)
NXP Semiconductors
New generation, high-voltage, high-speed switching npn transistor with an integrated damper diode in a full plastic envelope intended for use in horizontal deflection circuits of pc monitors. QUICK R.
olute Maximum Rating System (IEC 134) SYMBOL VCESM VCEO IC ICM IB IBM -IB(AV) -IBM Ptot Tstg Tj PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Base current (DC) Base current peak value Reverse base current Reve.
BU2515DF Datasheet (SavantIC)
SavantIC
·With TO-3PFa package ·High voltage;high speed ·Built-in damper diode APPLICATIONS ·For use in horizontal deflection circuits of PC monitors. PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION Abso.
EBO hFE-1 hFE-2 VF Emitter-base breakdown voltage IB=600mA ;IC=0 IC=4.5A ;IB=0.9A IC=4.5A ;IB=0.9A VCE=BVCES; VBE=0 Tj=125 VEB=6V; IC=0 IC=1.0A ; VCE=5V IC=4.5A ; VCE=5V IF=4.5A 7.5 13.5 V Collector-emitter saturation voltage 5.0 V Base-emitter saturation voltage 1.0 1.0 2.0 130 V Collec.
BU2515DF Datasheet (Inchange Semiconductor)
Inchange Semiconductor
·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 800V (Min) ·High Switching Speed ·Built-in Damper Diode ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICA.
nsistor BU2515DF ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA; IB= 0 800 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 600mA; IC= 0 7.5 V VCE(sat) Collector-Emitter Sat.