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BU2527AW - Silicon Diffused Power Transistor

Datasheet Summary

Description

New generation, high-voltage, high-speed switching npn transistor in a plastic envelope intended for use in horizontal deflection circuits of high resolution monitors.

Features

  • improved RBSOA performance and is suitable for operation up to 64 kHz. QUICK.

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Datasheet Details

Part number BU2527AW
Manufacturer NXP
File Size 74.09 KB
Description Silicon Diffused Power Transistor
Datasheet download datasheet BU2527AW Datasheet
Additional preview pages of the BU2527AW datasheet.

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Full PDF Text Transcription

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Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2527AW GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic envelope intended for use in horizontal deflection circuits of high resolution monitors. Features improved RBSOA performance and is suitable for operation up to 64 kHz. QUICK REFERENCE DATA SYMBOL VCESM VCEO IC ICM Ptot VCEsat ICsat ts PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Collector saturation current Storage time CONDITIONS VBE = 0 V TYP. 6.0 1.7 MAX. 1500 800 12 30 125 5.0 2.0 UNIT V V A A W V A µs Tmb ≤ 25 ˚C IC = 6.0 A; IB = 1.
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