BU2527AX Datasheet | NXP Semiconductors

DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of high resolution monitors. Features improved RBSOA performance and is suitable for operation up to 64 k Hz. QUICK REFERENCE DATA SYMBOL VCESM VCEO IC ICM Ptot VCEsat ICsat ts PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Collector saturation current Storage time CONDITIONS VBE = 0 V TYP. 6.0 1.7 MAX. 1500 800 12 30 45 5.0 2.0 UNIT V V A A W V A µs Ths ≤ 25 ˚C IC = 6.0 A; IB = 1.2 A ICsat = 6.0 A; IB(end) = 0.55 A PINNING - SOT399 PIN 1 2 3 base collector emitter DESCRIPTION PIN CONFIGURATION case SYMBOL c b 1 2 3 case isolated e LIMITING VALUES Limiting values in accordance with the Absolute Maximum Rating System (IEC 134) SYMBOL VCESM VCEO IC ICM IB IBM -IB(AV) -IBM Ptot Tstg Tj PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Base current (DC) Base current peak value Reverse base current Reverse base current peak value 1 Total power dissipation Storage temperature Junction temperature CONDITIONS VBE = 0 V MIN. -55 MAX. 1500 800 12 30 8 12 200 7 45 150 150 UNIT V V A A A A m A A W ˚C ˚C average over any 20 ms period Ths ≤ 25 ˚C THERMAL RESISTANCES SYMBOL Rth j-hs Rth j-hs Rth j-a PARAMETER Junction to heatsink Junction to heatsink Junction to ambient CONDITIONS without heatsink pound with heatsink pound in free air TYP. 35 MAX. 3.7 2.8 UNIT K/W K/W K/W 1 Turn-off current. September 1997 Rev 2.200 Philips Semiconductors Product specification Silicon Diffused Power Transistor ISOLATION LIMITING VALUE & CHARACTERISTIC Ths = 25 ˚C unless otherwise specified SYMBOL Visol PARAMETER Repetitive peak voltage from all three terminals to external...