BU2727AW
DESCRIPTION
High voltage, high-speed switching npn transistor in a plastic envelope intended for use in horizontal deflection circuits of high resolution monitors, suitable for operation up to 64 k Hz. Designed to withstand VCES pulses up to 1700V.
QUICK REFERENCE DATA
SYMBOL VCESM VCEO IC ICM Ptot VCEsat ICsat ts PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Collector saturation current Storage time CONDITIONS VBE = 0 V TYP. 5.0 2.2 MAX. 1700 825 12 30 125 1.0 tbf UNIT V V A A W V A µs
Tmb ≤ 25 ˚C IC = 5.0 A; IB = 0.91 A ICM = 5.0 A; IB(end) = 0.9 A
PINNING
- SOT429
PIN 1 2 3 tab base collector emitter collector DESCRIPTION
PIN CONFIGURATION
SYMBOL c b
1 2 3 e
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134) SYMBOL VCESM VCEO IC ICM IB IBM -IB(AV) -IBM Ptot Tstg Tj PARAMETER...
