BU2730 Datasheet | NXP Semiconductors

DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic envelope intended for use in horizontal deflection circuits of large screen colour television receivers. QUICK REFERENCE DATA SYMBOL VCESM VCEO IC ICM Ptot VCEsat ICsat ts PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Collector saturation current Storage time CONDITIONS VBE = 0 TYP. 9 3.5 MAX. 1700 825 16 40 125 5.0 4.5 UNIT V V A A W V A µs Tmb ≤ 25 ˚C IC = 9 A; IB = 1.8 A f = 32 k Hz ICsat = 9 A; f = 32 k Hz PINNING - SOT430 PIN 1 2 3 base collector emitter DESCRIPTION PIN CONFIGURATION SYMBOL c b 1 2 3 heat collector sink e LIMITING VALUES Limiting values in accordance with the Absolute Maximum Rating System (IEC 134) SYMBOL VCESM VCEO IC ICM IB IBM -IB(AV) -IBM Ptot Tstg Tj PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Base current (DC) Base current peak value Reverse base current Reverse base current peak value 1 Total power dissipation Storage temperature Junction temperature CONDITIONS VBE = 0 V MIN. -55 MAX. 1700 825 16 40 10 15 200 10 125 150 150 UNIT V V A A A A m A A W ˚C ˚C average over any 20 ms period Tmb ≤ 25 ˚C THERMAL RESISTANCES SYMBOL Rth j-mb Rth j-a PARAMETER Junction to mounting base Junction to ambient CONDITIONS in free air TYP. 35 MAX. 1.0 UNIT K/W K/W 1 Turn-off current. April 1997 Rev 1.000 Philips Semiconductors Preliminary specification Silicon Diffused Power Transistor BU2730AL STATIC CHARACTERISTICS Tmb = 25 ˚C unless otherwise specified SYMBOL ICES ICES IEBO BVEBO VCEsat VBEsat h FE h FE PARAMETER Collector cut-off current CONDITIONS VBE = 0 V; VCE = VCESMmax VBE = 0 V; VCE = VCESMmax; Tj = 125 ˚C VEB = 7.5 V; IC = 0 A IB = 1 m A IC = 9 A; IB = 1.8 A IC = 9 A; IB = 1.8 A IC = 1 A; VCE =...