Datasheet Details
| Part number | BUJ103 |
|---|---|
| Manufacturer | NXP Semiconductors |
| File Size | 103.02 KB |
| Description | Silicon Diffused Power Transistor |
| Datasheet | BUJ103_PhilipsSemiconductors.pdf |
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Overview: DISCRETE SEMICONDUCTORS DATA SHEET BUJ103A Silicon Diffused Power Transistor Product specification August 1998 Philips Semiconductors Product specification Silicon Diffused Power.
| Part number | BUJ103 |
|---|---|
| Manufacturer | NXP Semiconductors |
| File Size | 103.02 KB |
| Description | Silicon Diffused Power Transistor |
| Datasheet | BUJ103_PhilipsSemiconductors.pdf |
|
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BUJ103A High-voltage, high-speed planar-passivated npn power switching transistor in TO220AB envelope intended for use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor control systems, etc.
QUICK REFERENCE DATA SYMBOL VCESM VCBO VCEO IC ICM Ptot VCEsat hFEsat tf PARAMETER Collector-emitter voltage peak value Collector-Base voltage (open emitter) Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Fall time CONDITIONS VBE = 0 V 2 Tmb ≤ 25 ˚C IC = 3.0 A;IB = 0.6 A IC = 3.0 A;
VCE = 5 V Ic=2A,IB1=0.4A TYP.
| Part Number | Description |
|---|---|
| BUJ103A | Silicon Diffused Power Transistor |
| BUJ103AD | Silicon diffused power transistor |
| BUJ103AU | Silicon Diffused Power Transistor |
| BUJ103AX | Silicon Diffused Power Transistor |
| BUJ100 | Silicon Diffused Power Transistor |
| BUJ100AT | Silicon Diffused Power Transistor |
| BUJ101A | Silicon Diffused Power Transistor |
| BUJ101AU | Silicon Diffused Power Transistor |
| BUJ101AX | Silicon Diffused Power Transistor |
| BUJ105A | Silicon Diffused Power Transistor |