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BUJ100 - Silicon Diffused Power Transistor

General Description

High-voltage, high-speed planar-passivated npn power switching transistor in the TO92 envelope intended for use in compact fluorescent lamps and low power electronic lighting ballasts, converters and inverters, etc.

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DISCRETE SEMICONDUCTORS DATA SHEET BUJ100 Silicon Diffused Power Transistor Product specification September 1999 NXP Semiconductors Silicon Diffused Power Transistor Product specification BUJ100 GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in the TO92 envelope intended for use in compact fluorescent lamps and low power electronic lighting ballasts, converters and inverters, etc.