Datasheet Details
| Part number | BUJ100 |
|---|---|
| Manufacturer | NXP Semiconductors |
| File Size | 154.91 KB |
| Description | Silicon Diffused Power Transistor |
| Datasheet | BUJ100_PhilipsSemiconductors.pdf |
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Overview: DISCRETE SEMICONDUCTORS DATA SHEET BUJ100 Silicon Diffused Power Transistor Product specification September 1999 NXP Semiconductors Silicon Diffused Power Transistor Product specification BUJ100.
| Part number | BUJ100 |
|---|---|
| Manufacturer | NXP Semiconductors |
| File Size | 154.91 KB |
| Description | Silicon Diffused Power Transistor |
| Datasheet | BUJ100_PhilipsSemiconductors.pdf |
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|
|
High-voltage, high-speed planar-passivated npn power switching transistor in the TO92 envelope intended for use in pact fluorescent lamps and low power electronic lighting ballasts, converters and inverters, etc.
QUICK REFERENCE DATA SYMBOL VCESM VCBO VCEO IC ICM Ptot VCEsat hFE tfi PARAMETER Collector-emitter voltage peak value Collector-Base voltage (open emitter) Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Fall time (Inductive) CONDITIONS VBE = 0 V Tlead ≤ 25 ˚C IC = 0.75 A;IB = 150mA IC = 0.75 A;VCE = 5 V IC = 1.0 A;IBON = 200mA TYP.
0.24 14 50 MAX.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
BUJ100LR | NPN transistor | WeEn |
 |
BUJ100LR | Silicon diffused power transistor | NXP Semiconductors |
| Part Number | Description |
|---|---|
| BUJ100AT | Silicon Diffused Power Transistor |
| BUJ101A | Silicon Diffused Power Transistor |
| BUJ101AU | Silicon Diffused Power Transistor |
| BUJ101AX | Silicon Diffused Power Transistor |
| BUJ103 | Silicon Diffused Power Transistor |
| BUJ103A | Silicon Diffused Power Transistor |
| BUJ103AD | Silicon diffused power transistor |
| BUJ103AU | Silicon Diffused Power Transistor |
| BUJ103AX | Silicon Diffused Power Transistor |
| BUJ105A | Silicon Diffused Power Transistor |