Datasheet Summary
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
GENERAL DESCRIPTION
High-voltage, high-speed planar-passivated npn power switching transistor in the SOT223 envelope intended for use in pact fluorescent lamps, low power electronic lighting ballasts and similar high frequency converters and inverters.
QUICK REFERENCE DATA
SYMBOL VCESM VCBO VCEO IC ICM Ptot VCEsat hFE tfi PARAMETER Collector-emitter voltage peak value Collector-Base voltage (open emitter) Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Fall time (Inductive) CONDITIONS VBE = 0 V...
