• Part: BUJ105A
  • Description: Silicon Diffused Power Transistor
  • Manufacturer: NXP Semiconductors
  • Size: 144.89 KB
Download BUJ105A Datasheet PDF
NXP Semiconductors
BUJ105A
BUJ105A is Silicon Diffused Power Transistor manufactured by NXP Semiconductors.
DISCRETE SEMICONDUCTORS DATA SHEET BUJ105A Silicon Diffused Power Transistor Product specification February 1999 NXP Semiconductors Silicon Diffused Power Transistor Product specification GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in TO220AB envelope intended for use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor control systems, etc. QUICK REFERENCE DATA SYMBOL VCESM VCBO VCEO IC ICM Ptot VCEsat hFEsat tf PARAMETER Collector-emitter voltage peak value Collector-Base voltage (open emitter) Collector-emitter voltage (open base) Collector current (DC) Collector...