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BUJ105A - Silicon Diffused Power Transistor

General Description

High-voltage, high-speed planar-passivated npn power switching transistor in TO220AB envelope intended for use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor control systems, etc.

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DISCRETE SEMICONDUCTORS DATA SHEET BUJ105A Silicon Diffused Power Transistor Product specification February 1999 NXP Semiconductors Silicon Diffused Power Transistor Product specification BUJ105A GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in TO220AB envelope intended for use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor control systems, etc.