• Part: BUJ105AB
  • Description: Silicon Diffused Power Transistor
  • Manufacturer: NXP Semiconductors
  • Size: 156.51 KB
Download BUJ105AB Datasheet PDF
NXP Semiconductors
BUJ105AB
BUJ105AB is Silicon Diffused Power Transistor manufactured by NXP Semiconductors.
DISCRETE SEMICONDUCTORS DATA SHEET BUJ105AB Silicon Diffused Power Transistor Product specification October 2001 NXP Semiconductors Silicon Diffused Power Transistor Product specification GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in SOT404 (D2-PAK) surface-mount package intended for use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor control systems, etc. QUICK REFERENCE DATA SYMBOL VCESM VCBO VCEO IC ICM Ptot VCEsat hFEsat tf PARAMETER Collector-emitter voltage peak value Collector-Base voltage (open emitter) Collector-emitter voltage (open base) Collector...