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BUJ105AB Datasheet Silicon Diffused Power Transistor

Manufacturer: NXP Semiconductors

Overview: DISCRETE SEMICONDUCTORS DATA SHEET BUJ105AB Silicon Diffused Power Transistor Product specification October 2001 NXP Semiconductors Silicon Diffused Power Transistor Product specification BUJ105AB.

General Description

High-voltage, high-speed planar-passivated npn power switching transistor in SOT404 (D2-PAK) surface-mount package intended for use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor control systems, etc.

QUICK REFERENCE DATA SYMBOL VCESM VCBO VCEO IC ICM Ptot VCEsat hFEsat tf PARAMETER Collector-emitter voltage peak value Collector-Base voltage (open emitter) Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Fall time CONDITIONS VBE = 0 V Tmb ≤ 25 ˚C IC = 4.0 A;IB = 0.8 A IC = 4.0 A;

VCE = 5 V IC = 5 A;

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