BUK102-50GS Datasheet | NXP Semiconductors

Philips Semiconductors Product specification PowerMOS transistor TOPFET DESCRIPTION Monolithic temperature and overload protected power MOSFET in a 3 pin plastic envelope, intended as a general purpose switch for automotive systems and other applications. QUICK REFERENCE DATA SYMBOL VDS ID PD Tj RDS(ON) PARAMETER Continuous drain source voltage Continuous drain current Total power dissipation Continuous junction temperature Drain-source on-state resistance VIS = 10 V MAX. 50 50 125 150 28 UNIT V A W ˚C mΩ APPLICATIONS General controller for driving lamps motors solenoids heaters Features Vertical power DMOS output stage Low on-state resistance Overload protection against...