BUK221-50DY
BUK221-50DY is Power MOSFET manufactured by NXP Semiconductors.
Description
Monolithic temperature and overload protected dual high-side power switch based on TOPFET™ Trench technology in a 7-pin surface mount plastic package. Product availability: BUK221-50DY in SOT427 (D2-PAK).
1.2 Features s s s s s s s s Very low quiescent current Power Trench MOS™ Overtemperature protection Over and undervoltage protection Reverse battery protection Low charge pump noise Loss of ground protection Negative load clamping s s s s s s s s CMOS logic patibility Current limitation Latched overload protection ESD protection for all pins Diagnostic status indication Off-state open load detection Load dump protection Internal ground resistor.
1.3 Applications s 12 and 24 V grounded loads s Inductive loads s High inrush current loads s Replacement for relays and fuses.
1.4 Quick reference data
Table 1: Symbol RBLon IL IL(nom) IL(lim) VBG(oper) Quick reference data Parameter battery-load on-state resistance load current nominal load current (ISO) self-limiting load current battery-ground operating voltage Min 3.6 8 5.5 Max 90 4 16 35 Units mΩ A A A V
Philips Semiconductors
Dual channel high-side TOPFET™
2. Pinning information
S mb I1 P I2 1 2 3 4 5 6 7 L2 L1
Front view
MBK128
03pa68
No connection can be made to pin 4 (cropped).
P represents protection circuitry.
Fig 1. Pinning; SOT427 (D2-PAK).
Fig 2. Symbol; (Dual High-Side Switch) TOPFETTM.
2.1 Pin description
Table 2: Symbol L1 G I1 B S I2 L2 [1] [2]
Pin description
Pin 1 2 3 4 5 6 7 mb I/O O I O I O [2] [1] [2]
Description load 1 circuit mon ground input 1 battery status input 2 load 2 mounting base
Pin 4 is cropped and cannot be connected to the PCB by surface mounting. The battery is connected to the mounting base.
9397 750 11167
© Koninklijke Philips Electronics N.V. 2003. All rights reserved.
Product data
Rev. 01
- 16 April 2003
2 of 16
Philips Semiconductors
Dual channel high-side TOPFET™
3. Block diagram
4/mb B
CHANNEL1...
