BUK451-100A Datasheet | NXP Semiconductors

DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies (SMPS), motor control, welding, DC/DC and AC/DC converters, and in general purpose switching applications. QUICK REFERENCE DATA SYMBOL VDS ID Ptot Tj RDS(ON) PARAMETER BUK451 Drain-source voltage Drain current (DC) Total power dissipation Junction temperature Drain-source on-state resistance MAX. -100A 100 3.0 40 175 0.85 MAX. -100B 100 3.0 40 175 1.1 UNIT V A W ˚C Ω PINNING - TO220AB PIN 1 2 3 tab gate drain source drain DESCRIPTION PIN CONFIGURATION tab SYMBOL d g 1 23 s LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL VDS VDGR ±VGS ID ID IDM Ptot Tstg Tj PARAMETER Drain-source voltage Drain-gate voltage Gate-source voltage Drain current (DC) Drain current (DC) Drain current (pulse peak value) Total power dissipation Storage temperature Junction Temperature CONDITIONS RGS = 20 kΩ Tmb = 25 ˚C Tmb = 100 ˚C Tmb = 25 ˚C Tmb = 25 ˚C MIN. - 55 -100A 3.0 3.0 12 40 175 175 MAX. 100 100 30 -100B 3.0 3.0 12 UNIT V V V A A A W ˚C ˚C Philips Semiconductors Preliminary Specification Power MOS transistor BUK451-100A/B THERMAL RESISTANCES SYMBOL Rth j-mb Rth j-a PARAMETER Thermal resistance junction to mounting base Thermal resistance junction to ambient CONDITIONS MIN. TYP. 60 MAX. 3.75 UNIT K/W K/W STATIC CHARACTERISTICS Tmb = 25 ˚C unless otherwise specified SYMBOL V(BR)DSS VGS(TO) IDSS IDSS IGSS RDS(ON) PARAMETER Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current Zero gate voltage drain current Gate source leakage current Drain-source on-state resistance CONDITIONS VGS = 0 V; ID = 0.25 m A VDS = VGS; ID = 1 m A VDS = 100 V; VGS = 0 V; Tj = 25 ˚C VDS = 100 V; VGS = 0 V; Tj =125 ˚C VGS = ±30 V; VDS = 0 V VGS = 10 V; BUK451-100A ID = 2.5 A BUK451-100B MIN. 100 2.1 TYP. 3.0 1 0.1 10 0.75 0.90 MAX. 4.0 10 1.0 100 0.85 1.10 UNIT V V µA...