BUK451-100B - PowerMOS transistor

NXP Semiconductors

General Description

N-channel enhancement mode field-effect power transistor in a plastic envelope.

The device is intended for use in Switched Mode Power Supplies (SMPS), motor control, welding, DC/DC and AC/DC converters, and in general purpose switching applications.

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BUK451-100B powermos transistor by NXP Semiconductors - Datasheet Preview

Datasheet Details

Part number	BUK451-100B
Manufacturer	NXP Semiconductors
File Size	48.39 KB
Description	PowerMOS transistor
Datasheet	BUK451-100B Datasheet

Full PDF Text Transcription for BUK451-100B (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for BUK451-100B. For precise diagrams, and layout, please refer to the original PDF.

Philips Semiconductors Preliminary Specification PowerMOS transistor BUK451-100A/B GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plast...

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ON N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies (SMPS), motor control, welding, DC/DC and AC/DC converters, and in general purpose switching applications. QUICK REFERENCE DATA SYMBOL VDS ID Ptot Tj RDS(ON) PARAMETER BUK451 Drain-source voltage Drain current (DC) Total power dissipation Junction temperature Drain-source on-state resistance MAX. -100A 100 3.0 40 175 0.85 MAX. -100B 100 3.0 40 175 1.

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