BUK465-60A - PowerMOS transistor

Datasheet Summary

Description

N-channel enhancement mode field-effect power transistor in a plastic envelope suitable for surface mount applications.

NXP

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Datasheet Details

Part number	BUK465-60A
Manufacturer	NXP
File Size	59.18 KB
Description	PowerMOS transistor
Datasheet	BUK465-60A Datasheet
Additional preview pages of the BUK465-60A datasheet.

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Philips Semiconductors Product specification PowerMOS transistor BUK465-60A GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope suitable for surface mount applications. The device is intended for use in Switched Mode Power Supplies (SMPS), motor control, welding, DC/DC and AC/DC converters, and in automotive and general purpose switching applications. QUICK REFERENCE DATA SYMBOL VDS ID Ptot Tj RDS(ON) PARAMETER Drain-source voltage Drain current (DC) Total power dissipation Junction temperature Drain-source on-state resistance MAX. -60A 60 41 125 175 0.

Published: Mar 23, 2005 |